SPN8812 Description
The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8812 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN8812 Key Features
- 100V/63A,RDS(ON)=9.8mΩ@VGS=10V
- 100V/63A,RDS(ON)=13.0mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- PPAK5x6-8L package design