‹ -30V/-7.2A,RDS(ON)= 24mΩ@VGS=- 10V ‹ -30V/-5.6A,RDS(ON)= 30mΩ@VGS=-4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maxi.

z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LC.

The SPP4925B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

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