SPP4925B - P-Channel MOSFET

SYNC POWER

General Description

The SPP4925B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

-30V/-7.2A,RDS(ON)= 24mΩ@VGS=- 10V -30V/-5.6A,RDS(ON)= 30mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP.
8P package design.

📥 Download Datasheet

SPP4925B p-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPP4925B
Manufacturer	SYNC POWER
File Size	266.20 KB
Description	P-Channel MOSFET
Datasheet	SPP4925B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SPP42N03S2L-13	OptiMOS Power-Transistor	Infineon Technologies AG
SPP46N03	SIPMOS Power Transistor	Infineon Technologies
SPP46N03L	SIPMOS Power Transistor	Infineon Technologies
SPP47N10	SIPMOS Power-Transistor	Infineon Technologies AG
SPP47N10L	SIPMOS Power-Transistor	Infineon Technologies AG

Other Datasheets by SYNC POWER

Part Number	Description
SPP4925	P-Channel MOSFET
SPP4925W	P-Channel MOSFET
SPP4931	P-Channel MOSFET
SPP4931W	P-Channel MOSFET
SPP4953	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SPP4925B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4925B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES -30V/-7.2A,RDS(ON)= 24mΩ@VGS=- 10V -30V/-5.6A,RDS(ON)= 30mΩ@VGS=-4.