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SPP1305 - P-Channel MOSFET

Description

The SPP1305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -20V/-0.95A,RDS(ON)=280mΩ@VGS=-4.5V.
  • -20V/-0.80A,RDS(ON)=380mΩ@VGS=-2.5V.
  • -20V/-0.70A,RDS(ON)=530mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-323 ( SC.
  • 70 ) package design PIN.

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Datasheet Details

Part number SPP1305
Manufacturer SYNC Power
File Size 377.38 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP1305 Datasheet

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Full PDF Text Transcription

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SPP1305 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -20V/-0.95A,RDS(ON)=280mΩ@VGS=-4.5V  -20V/-0.80A,RDS(ON)=380mΩ@VGS=-2.
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