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SamHop Microelectronics

SP4412 Datasheet Preview

SP4412 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SP4412
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
19 @ VGS=10V
30V 16A
31 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
TC=25°C
ID
Drain Current-Continuous a c
TC=100°C
TA=25°C
TA=70°C
IDM -Pulsed c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
R JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Details are subject to change without notice.
1
4G
3S
2S
1S
Limit
30
±20
16
12.5
7
5.6
60
56
1.67
1.07
-55 to 150
Units
V
V
A
A
A
A
A
mJ
W
W
°C
75 °C/W
4.8 °C/W
Apr,16,2014
www.samhop.com.tw




SamHop Microelectronics

SP4412 Datasheet Preview

SP4412 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP4412
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3.5A
VGS=4.5V , ID=2.8A
VDS=5V , ID=3.5A
VDS=10V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=3.5A,VGS=10V
VDS=15V,ID=3.5A,VGS=4.5V
VDS=15V,ID=3.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
Typ
1.8
15
23
14
500
120
73
13
12.5
19
26
7
3.8
1.2
1.8
0.75
Max Units
V
1 uA
±10 uA
2.5 V
19 m ohm
31 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
Apr,16,2014
2 www.samhop.com.tw


Part Number SP4412
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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