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SamHop Microelectronics

SP6722 Datasheet Preview

SP6722 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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SP6722Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 2.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
17 @ VGS=10V
60V 32A
24 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
TA=25°C
ID
Drain Current-Continuous c
TA=70°C
TC=25°C
TC=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
TA=25°C
PD
Maximum Power Dissipation
TA=70°C
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
R JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Details are subject to change without notice.
1
4G
3S
2S
1S
Limit
60
±20
8
6.4
32
25.6
83
81
1.67
1.07
30
19
-55 to 150
Units
V
V
A
A
A
A
A
mJ
W
W
W
W
°C
75 °C/W
4.2 °C/W
Feb,14,2017
www.samhop.com.tw




SamHop Microelectronics

SP6722 Datasheet Preview

SP6722 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP6722
Ver 2.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
60
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=8A
VGS=4.5V , ID=6.7A
VDS=10V , ID=8A
VDS=25V,VGS=0V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=30V,ID=8A,VGS=10V
VDS=30V,ID=8A,VGS=4.5V
VDS=30V,ID=8A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=7A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ Max Units
1
±100
V
uA
nA
23V
14 17 m ohm
18 24 m ohm
26 S
1542
110
85
pF
pF
pF
28 ns
23 ns
42 ns
13 ns
17 nC
8.6 nC
2.3 nC
4.4 nC
0.78 1.3
V
Feb,14,2017
2 www.samhop.com.tw


Part Number SP6722
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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