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STB438S - N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220.

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Datasheet Details

Part number STB438S
Manufacturer SamHop Microelectronics
File Size 133.00 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STB438S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB/P438SGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 9 @ VGS=10V 40V 60A 10 @ VGS=4.5V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
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