STB434S - N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics

Key Features

Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 60A R DS(ON) (m Ω) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S.

STB434S n-channel logic level enhancement mode field effect transistor by SamHop Microelectronics - Datasheet Preview

Datasheet Details

Part number	STB434S
Manufacturer	SamHop Microelectronics
File Size	244.75 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	STB434S Datasheet

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www.DataSheet4U.com STB/P434S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 60A R DS(ON) (m Ω) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 ±20 TC=25°C TC=70°C 60 48 176 91 TC=25°C TC=70°C 62.