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S T M4550
S amHop Microelectronics C orp. Apr. 19. 2006
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
55V
F E AT UR E S
( m Ω ) Max
ID
5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
50 @ V G S = 10V 70 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C a -P ulsed Drain-S ource Diode Forward C urrent b Maximum P ower Dissipation b Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T S TG
d
Limit 60 55 20 5 20 1.7 2.
STM4550 Datasheet
