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Gre r Pr
STM4432
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
12A
R DS(ON) (m ) Max
11 @ VGS=10V 15 @ VGS=4.5V
S O-8 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
Limit 40 ±20 TA=25°C TA=70°C 12 9.6 60 121 TA=25°C TA=70°C 2.5 1.
STM4432 Datasheet
