SamHop Microelectronics STM4436
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TA=25°C TA=70°C EAS Single Pulse Avalanche Energy d TA=25°C PD Maximum Power Dissipation TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 40 ±20 13 10.4 65 256 2.5 1.6 -55 to 150 50 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Oct,15,2015 STM4436 Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Symbol Parameter Condi