900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SamHop Microelectronics

STM4806 Datasheet Preview

STM4806 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STM4806Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
7.5 @ VGS=10V
30V 15A
9.9 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
D5
D6
D7
D8
4G
3S
2S
1S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
30
±20
15
12
75
86
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,17,2012
www.samhop.com.tw




SamHop Microelectronics

STM4806 Datasheet Preview

STM4806 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STM4806
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
30 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=7.5A
VGS=4.5V , ID=6A
VDS=10V , ID=7.5A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=7.5A,VGS=10V
VDS=15V,ID=7.5A,VGS=4.5V
VDS=15V,ID=7.5A,
VGS=10V
1 1.6 3 V
6.0 7.5 m ohm
7.5 9.9 m ohm
24 S
1402
242
205
pF
pF
pF
6 ns
34 ns
70 ns
34 ns
23 nC
11.8 nC
2.1 nC
6.6 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.3mH,VDD = 20V.(See Figure13)
0.8 1.3 V
Dec,17,2012
2 www.samhop.com.tw


Part Number STM4806
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
PDF Download

STM4806 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STM4800A N-Channel E nhancement Mode Field Effect Transistor
SamHop Microelectronics
2 STM4800S N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
3 STM4806 N-Channel Logic Level Enhancement Mode Field Effect Transistor
SamHop Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy