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STM4880
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
ID
9.6A
R DS(ON) (m Ω) Max
17 @ VGS=10V 26 @ VGS=4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
TA=25°C TA=70°C
Limit 30 ±20 9.6 7.7 40 20
Units V V A A A mJ W W °C
-Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation
a
TA=25°C TA=70°C
2.5 1.
STM4880 Datasheet
