STM4884 Datasheet PDF

FEATURES

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ID 13A RDS(ON) (m ) Typ 5.5 @VGS=10V 8.5 @VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VDGR VGS ID IDM EAS I AR PD TJ, TSTG Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20 kΩ) Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Current Maximum Power Dissipation a b d a Limit 30 30 ±20 TA=25°C TA=70°C 13 10.5 52 45 13 TA=25°C TA=70°C 2.5 1.6 -55 to 150 Units V V V A A A mJ A W W °C Sigle Pulse Avalanche Energy Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Mar,02,2011 1 STM4884 Ver 3.2

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSX IDSS IGSS Ze...