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STM4884 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ID 13A RDS(ON) (m ) Typ 5.5 @VGS=10V 8.5 @VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D.

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Datasheet Details

Part number STM4884
Manufacturer SamHop Microelectronics
File Size 88.54 KB
Description N-Channel MOSFET
Datasheet download datasheet STM4884 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Gre r Pro STM4884 Ver 3.2 SamHop Micrpelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ID 13A RDS(ON) (m ) Typ 5.5 @VGS=10V 8.5 @VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VDGR VGS ID IDM EAS I AR PD TJ, TSTG Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20 kΩ) Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Current Maximum Power Dissipation a b d a Limit 30 30 ±20 TA=25°C TA=70°C 13 10.5 52 45 13 TA=25°C TA=70°C 2.5 1.