STM4886E Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 17.8A R DS(ON) (m Ω) Max 5 @ VGS=10V 7.5 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 30 ±20 TA=25°C TA=70°C 17.8 14.2 89 289 TA=25°C TA=70°C 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Jun,26,2010 1 STM4886E Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain...