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SamHop Microelectronics

STS2300 Datasheet Preview

STS2300 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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S amHop Microelectronics C orp.
S TS 2300
MAR . 10 2004
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
20V 3.8A
40 @ VGS = 4.5V
60 @ VGS = 2.5V
75 @ VGS = 1.8V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
AB S OL UTE MAXIMUM R ATING (TA=25 C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
10
3.8
15
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
100
C /W
1




SamHop Microelectronics

STS2300 Datasheet Preview

STS2300 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S TS 2300
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
BVDSS VGS =0V, ID =250uA
IDSS VDS =20V, VGS =0V
IGSS VGS = 10V, VDS = 0V
V G S (th)
R DS(ON)
VDS =VGS, ID = 250uA
VGS =4.5V, ID =5.0A
VGS = 2.5V, ID =4.0A
VGS =1.8V, ID =1.0A
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 5V, VGS = 4.5V
VDS = 5V, ID = 5A
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS c
C IS S
COSS
CRSS
VDS = 15V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
tD(ON) VDD = 10V,
tr
tD(O F F )
ID = 1A,
VGS = 4.5V,
R L = 10 ohm
tf R GEN = 6 ohm
Qg VDS = 10V, ID = 3.5A,
Qgs VGS = 4.5V
Qgd
Min Typ C Max Unit
20 V
1 uA
100 nA
0.6 0.78 1.5 V
32 40 m-ohm
50 60 m-ohm
62 75 m-ohm
18 A
5S
888 PF
144 PF
115 PF
31.8 ns
14.5 ns
50.3 ns
31.9 ns
16.8 nC
2.5 nC
5.4 nC
2


Part Number STS2300
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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