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SamHop Microelectronics

STS2306 Datasheet Preview

STS2306 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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S amHop Microelectronics C orp.
S TS 2306
Apr,21 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID R DS (ON) ( m ) Max
45 @ VGS = 4.5V
20V 2.8A
60 @ V G S =2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
8
2.8
12
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
100
C /W
1




SamHop Microelectronics

STS2306 Datasheet Preview

STS2306 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S TS 2306
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
Forward Transconductance
DYNAMIC CHARACTERISTICS c
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Qgs
Gate-Drain Charge
Qgd
C ondition
VGS =0V, ID =250uA
VDS =16V, VGS =0V
VGS = 8V,VDS =0V
VDS =VGS, ID = 250uA
VGS =4.5V, ID = 2.8A
VGS =2.5V, ID = 2.0A
VDS = 7V, ID =5A
VDS =10V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGEN = 4.5V,
R L = 10 ohm
R GEN = 10 ohm
VDS =10V, ID = 1A,
VGS =4.5V
Min Typ C Max Unit
20 V
1 uA
100 nA
0.5 0.8 1.5 V
33 45
52 60 m ohm
5S
608 PF
114 PF
86 PF
10 ns
14 ns
39 ns
26 ns
9.2 nC
1.6 nC
2.6 nC
2


Part Number STS2306
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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