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SamHop Microelectronics

STU25N03L Datasheet Preview

STU25N03L Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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S T U/D25N03L
S amHop Microelectronics C orp.
J uly 11,2005
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
www.DataShee3t40UV.com 25A
R DS (ON) ( m W ) Max
21 @ VGS = 10V
32 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO251 and TO 252 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TC=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
20
25
75
20
50
-55 to 175
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient a
R JC
R JA
3
50
C /W
C /W
1




SamHop Microelectronics

STU25N03L Datasheet Preview

STU25N03L Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S T U/D25N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min TypC Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSGhaetee-t4BUo.dcyomLeakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
30
IDSS VDS =24V, VGS =0V
IGSS VGS = 20V, VDS =0V
V
1 uA
100 nA
VGS(th) VDS =VGS, ID = 250uA
1 1.7 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =10A
VGS =4.5V, ID= 6A
17 21 m ohm
25 32 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID = 10A
20
16
A
S
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
VDS =15V, VGS = 0V
f =1.0MHZ
VDD = 15V
R L=15 ohm
ID = 1A
VGS = 10V
R GEN = 6 ohm
940 PF
148 PF
85 PF
13 ns
10 ns
30 ns
6 ns
Total Gate Charge
Qg VDS =15V, ID =10A,VGS =10V
VDS =15V, ID =10A,VGS =4.5V
15.9
7.4
nC
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =15V, ID =10A
Qgd VGS =10V
2 . 0 nC
4.1 nC
2


Part Number STU25N03L
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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