Datasheet Summary
S T U/D25N03L
S amHop Microelectronics C orp.
J uly 11 , 2005
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
.. 30V
F E AT UR E S
( m W ) Max
25A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
21 @ V G S = 10V 32 @ V G S = 4.5V
R ugged and reliable. TO251 and TO 252 P ackage.
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and...