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SamHop Microelectronics

STU417L Datasheet Preview

STU417L Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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STU/D417LGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-34A
16 @ VGS=-10V
26 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Sigle Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
-40
±20
-34
-27.2
-103
132
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Aug,24,2012
www.samhop.com.tw




SamHop Microelectronics

STU417L Datasheet Preview

STU417L Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STU/D417L
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= ±20V , VDS=0V
-40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-17A
VGS=-4.5V , ID=-13A
VDS=-10V , ID=-17A
VDS=-20V,VGS=0V
f=1.0MHz
VDD=-20V
ID=-1.0A
VGS=-10V
RGEN= 6 ohm
VDS=-20V,ID=-17A,VGS=-10V
VDS=-20V,ID=-17A,VGS=-4.5V
VDS=-20V,ID=-17A,
VGS=-10V
-1
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS= -3A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
Typ Max Units
1
±100
V
uA
nA
-1.9 -3
V
13 16 m ohm
19 26 m ohm
28 S
1840
280
173
pF
pF
pF
26 ns
33 ns
115 ns
34 ns
34 nC
16 nC
4 nC
9.4 nC
-0.75 -1.3 V
Aug,24,2012
2 www.samhop.com.tw


Part Number STU417L
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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