K1S16161CA-I Datasheet | Samsung Semiconductor

FEATURES - - - - - Ut RAM GENERAL DESCRIPTION The K1S16161CA is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 2.7~3.1V Three State Outputs patible with Low Power SRAM - Support 4 page read mode - Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Product Family Operating Temp. Vcc Range Speed (t RC) 70ns Power Dissipation Standby (ISB1, Max.) 80µA Operating (ICC2, Max.) 35m A PKG Type Industrial(-40~85°C) 2.7~3.1V 48-FBGA-6.00x7.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A0 A1 A2 CS2 Vcc Vss I/O9 A3 A4 CS1 I/O1 Row Addresses Row select Memory array I/O10 I/O11 A5 A6 I/O2 I/O3...