Description
FOR 2M x 16Bit x 4 Bank DDR SDRAM
The K4D261638K is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.Synchronous
Features
- 2.5V + 5% power supply for device operation.
 
- 2.5V + 5% power supply for I/O interface.
 
- SSTL_2 compatible inputs/outputs.
 
- 4 banks operation.
 
- MRS cycle with address key programs
-. Read latency 2,3(clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
 
- All inputs except data & DM are sampled at the positive going edge of the system clock.
 
- Differential clock input.
 
- Wrtie-Interrupted by Read Function.