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K4D261638K Datasheet 128Mbit GDDR SDRAM

Manufacturer: Samsung Semiconductor

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Overview

K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.3 July 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

Key Features

  • 2.5V + 5% power supply for device operation.
  • 2.5V + 5% power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 2,3(clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of the system clock.
  • Differential clock input.
  • Wrtie-Interrupted by Read Function.

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