K4T51043Q Datasheet 512mb B-die Ddr2 Sdram

Manufacturer: Samsung Semiconductor

Overview: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.4 February 2005 Page 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.

Datasheet Details

Part number	K4T51043Q
Manufacturer	Samsung Semiconductor
File Size	507.78 KB
Description	512Mb B-die DDR2 SDRAM
Datasheet	K4T51043Q_Samsung.pdf

General Description

2.3 Addressing 3.

Absolute Maximum Rating 4.

AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.

Key Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
4 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read Latency(RL) -1.
Burst Length: 4 , 8(Interleave.

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