K9G8G08B0B Datasheet - Samsung

FLASH MEMORY

K9G8G08B0B Features

* Voltage Supply - 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)By

K9G8G08B0B General Description

Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte p.

K9G8G08B0B Datasheet (839.83 KB)

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K9G8G08B0B

Manufacturer:

Samsung

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839.83 KB

Description:

Flash memory.
K9G8G08B0B K9G8G08U0B Final FLASH MEMORY K9G8G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHA.

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K9G8G08B0B Features

K9G8G08B0B General Description

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K9G8G08B0B Distributor