K9HAG08U1M Overview
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K9HAG08U1M Key Features
- Voltage Supply : 2.7 V ~ 3.6 V
- Organization
- Memory Cell Array : (1G+ 32M)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 50µs(Max.)
K9HAG08U1M Applications
- Samsung Electronics reserves the right to change products or specification without notice