K9HAG08U1M Datasheet - Samsung

Flash Memory

K9HAG08U1M Features

* Voltage Supply : 2.7 V ~ 3.6 V

* Organization - Memory Cell Array : (1G+ 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte

* Page Read Operation - Page Size : (2K + 64)Byt

K9HAG08U1M General Description

Offered in 1Gx8bit, the K9L8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 950µs on the 2,112-byte page and an erase operation can be performed i.

K9HAG08U1M Datasheet (827.46 KB)

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K9HAG08U1M

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Samsung

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827.46 KB

Description:

Flash memory.
www.DataSheet4U.com K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO S.

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K9HAG08U1M Features

K9HAG08U1M General Description

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