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  Samsung Electronic Components Datasheet  

K9HDG08UXB Datasheet

32Gb B-die NAND Flash

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SAMSUNG CONFIDENTIAL
Rev. 1.1, Sep. 2012
K9GBG08U0B
K9LCG08U0B
K9HDG08UXB
32Gb B-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2012 Samsung Electronics Co., Ltd. All rights reserved.
-1-


  Samsung Electronic Components Datasheet  

K9HDG08UXB Datasheet

32Gb B-die NAND Flash

No Preview Available !

K9GBG08U0B
K9LCG08U0B K9HDG08UXB
datasheet
SAMSUNG CONFIDENTIAL
Rev. 1.1
FLASH MEMORY
Revision History
Revision No.
History
0.0 1. Initial issue
0.1 1. Chpater 1.1 Features updated.
2. Chpater 1.2 Product List updated.
3. Chpater 1.3 General Description revised.
4. Chpater 1.4 Pin Configuration (48TSOP) updated.
5. Chpater 2.1 Absolute Maximum DC Rating added.
6. Chpater 2.2 Recommended Operating Conditions revised.
7. Chpater 2.3 DC And Operating Characteristics revised.
8. Chpater 2.4 Valid Block revised.
9. Chpater 2.5 AC Test Condition revised.
10. Chpater 2.6 Capacitance revised.
11 Chpater 2.8 Program / Erase Characteristics revised.
12.Chpater 2.10 AC Characteristics for Operation revised.
13.Chpater 4.26 00h Address ID Cycle revised.
14.Chpater 4.27 40h Address ID Cycle revised.
15.Chpater 5.18 Read Id revised.
0.11 1. Chapter 1.1 Features revised.
2. Chpater 1.2 Product List revised.
3. Chpater 1.3 General Description revised.
1.0 1. There is no change.
1.1 1. PartNumber(QDP) Added.
2.Chpater 1.5.1 Package Dimensions revised.
Draft Date Remark Edited by Reviewed by
Jul. 14, 2011 Target Y.E.Yoon Y.E.Yoon
Oct. 31, 2011 Target H.H.Shin H.K.Kim
Mar. 02, 2012 Target H.H.Shin H.K.Kim
Mar. 07, 2012
Sep, 04. 2012
Final
Final
H.H.Shin
H.H.Shin
H.K.Kim
H.K.Kim
-2-


Part Number K9HDG08UXB
Description 32Gb B-die NAND Flash
Maker Samsung
Total Page 30 Pages
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