K9HAG08U1M Datasheet | Samsung Semiconductor

.. K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. - Samsung Electronics reserves the right to change products or specification without notice. .. K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY Document Title D 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 0.3 0.4 History 1. Initial issue 1.Technical Note is changed 1. Endurance is changed. (10K->1.5K) 1. 4bit/512Byte ECC->3bit/512Byte ECC 2. The number of bad block is changed from 160 to 100 for 8Gb DDP. 3. Note of program/erase characteristics is added. Draft Date Mar. 1. 2005 Apr. 1. 2005 May 3. 2005 June 29. 2005 July 7. 2005 Remark Advance Advance Preliminary Preliminary Preliminary 0.5 0.6 1.t PROG 800µs(Typ.) -> 950µs(Typ.) 1..AC Para. t RHW deleted 2. Retention 10 Year -> 5 Year Aug. 22. 2005 Aug. 29. 2005 Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and...