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K9HAG08U1M - Flash Memory

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Samsung

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K9HAG08U1M Flash Memory by Samsung - Datasheet Preview — Datasheet preview – K9HAG08U1M

Datasheet Details

Part number	K9HAG08U1M
Manufacturer	Samsung
File Size	827.46 KB
Description	Flash Memory
Datasheet	K9HAG08U1M Datasheet
Additional preview pages of the K9HAG08U1M datasheet.

Product details

Description

Offered in 1Gx8bit, the K9L8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (1G+ 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 50µs(Max. ) - Serial Access : 30ns(Min. ).
K9MBG08U5M : 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 950µs(Typ. ) - Block E.

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Published: Nov 23, 2007 |