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K9HAG08U1M - Flash Memory

Datasheet Summary

Description

Offered in 1Gx8bit, the K9L8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Features

  • Voltage Supply : 2.7 V ~ 3.6 V.
  • Organization - Memory Cell Array : (1G+ 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 50µs(Max. ) - Serial Access : 30ns(Min. ).
  • K9MBG08U5M : 50ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Program time : 950µs(Typ. ) - Block E.

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Datasheet Details

Part number K9HAG08U1M
Manufacturer Samsung
File Size 827.46 KB
Description Flash Memory
Datasheet download datasheet K9HAG08U1M Datasheet
Additional preview pages of the K9HAG08U1M datasheet.

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www.DataSheet4U.com K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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