K9LCG08U1A Overview
for Interleaving operation is deleted. Meaning is swapped between tCBSY2 and tDCBSYR2. Value of tWHR2 is changed from 180ns to 300ns.
| Part number | K9LCG08U1A |
|---|---|
| Datasheet | K9LCG08U1A_Samsung.pdf |
| File Size | 1.99 MB |
| Manufacturer | Samsung Semiconductor |
| Description | 32Gb A-die NAND Flash |
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for Interleaving operation is deleted. Meaning is swapped between tCBSY2 and tDCBSYR2. Value of tWHR2 is changed from 180ns to 300ns.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K9LCG08U0B | 32Gb B-die NAND Flash |
| K9LCGD8S1M-B | FLASH MEMORY |
| K9LCGD8U1M-B | FLASH MEMORY |
| K9LCGD8X1M | FLASH MEMORY |
| K9L8G08U1A | Flash Memory |
| K9LAG08U1A | FLASH MEMORY |
| K9LBG08U0E | 16Gb E-die NAND Flash |
| K9LBG08U1D | FLASH MEMORY |
| K9LBG08U1M | FLASH MEMORY |