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K9LCGD8X1M Datasheet FLASH MEMORY

Manufacturer: Samsung Semiconductor

Download the K9LCGD8X1M datasheet PDF. This datasheet also includes the K9GB-GD8 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K9GB-GD8-U0M.pdf) that lists specifications for multiple related part numbers.

Overview

K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Advance FLASH MEMORY K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO.

Key Features

  • Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit.
  • Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte.
  • Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ. ) , 100µs(Max. ) - Data Transfer rate : 133Mbps(VccQ:3.3V) / 66Mbps(VccQ:1.8V).
  • Fast Write Cycle Time - Page Program time.