K9W4G08U1M Datasheet - Samsung

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit

K9W4G08U1M General Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and.

K9W4G08U1M Datasheet (641.65 KB)

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Part number:

K9W4G08U1M

Manufacturer:

Samsung

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641.65 KB

Description:

256m x 8 bit / 128m x 16 bit nand flash memory.
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.

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K9W4G08U1M 256M Bit 128M Bit NAND Flash Memory Samsung

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K9W4G08U1M Features

K9W4G08U1M General Description

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