K9W8G08U1M memory equivalent, 512m x 8 bit / 256m x 16 bit nand flash memory.
* Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + .
such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solutio.
Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2.
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