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K9W4G16U1M Datasheet 256m X 8 Bit / 128m X 16 Bit Nand Flash Memory

Manufacturer: Samsung Semiconductor

Overview: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1.

Key Features

  • Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit.
  • Automatic Program and Erase - Pag.

More Datasheets from Samsung Semiconductor

Part Number Description
K9W4G08U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W8G08U1M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G16U1M Nand Flash Memory
K9WAG08U1D 4Gb D-die NAND Flash
K9WAG08U1E 4Gb E-die NAND Flash
K9WAG08U1F 4Gb F-die NAND Flash
K9WBG08U1M FLASH MEMORY

K9W4G16U1M Distributor