K9W4G08U1M Description
IOL(R/B) of 1.8V device is changed. 8mA -->4mA Draft Date Aug. 2001 Remark Advance Preliminary 0.2.
- Part: K9W4G08U1M
- Manufacturer: Samsung Semiconductor
- Size: 641.65 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K9W4G16U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9W8G08U1M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9W8G16U1M | Nand Flash Memory |
| K9WAG08U1D | 4Gb D-die NAND Flash |
| K9WAG08U1E | 4Gb E-die NAND Flash |