K9W8G08U1M
K9W8G08U1M is 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory manufactured by Samsung Semiconductor.
ATURES
- Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
- Organization
- Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit -X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit
- Data Register -X8 device(K9XXG08XXM): (2K + 64)bit x8bit -X16 device(K9XXG16XXM): (1K + 32)bit x16bit
- Cache Register -X8 device(K9XXG08XXM) : (2K + 64)bit x8bit -X16 device(K9XXG16XXM) : (1K + 32)bit x16bit
- Automatic Program and Erase
- Page Program -X8 device(K9XXG08XXM) : (2K + 64)Byte -X16 device(K9XXG16XXM) : (1K + 32)Word
- Block Erase -X8 device(K9XXG08XXM) : (128K + 4K)Byte -X16 device(K9XXG16XXM) : (64K + 2K)Word
- Page Read Operation
- Page Size
- X8 device(K9XXG08XXM) : 2K-Byte
- X16 device(K9XXG16XXM) : 1K-Word
- Random Read : 25µs(Max.)
- Serial Access : 50ns(Min.) 30ns(Min., K9XXG08UXM only)
- Fast Write Cycle Time
- Program time : 300µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- mand Register Operation
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