logo

K9XXG16UXM-E Datasheet, Samsung

K9XXG16UXM-E Datasheet, Samsung

K9XXG16UXM-E

datasheet Download (Size : 680.06KB)

K9XXG16UXM-E Datasheet

K9XXG16UXM-E memory equivalent, 256m x 8 bit / 128m x 16 bit nand flash memory.

K9XXG16UXM-E

datasheet Download (Size : 680.06KB)

K9XXG16UXM-E Datasheet

Features and benefits


* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8.

Application

such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solutio.

Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 211.

Image gallery

K9XXG16UXM-E Page 1 K9XXG16UXM-E Page 2 K9XXG16UXM-E Page 3

TAGS

K9XXG16UXM-E
256M
Bit
128M
Bit
NAND
Flash
Memory
Samsung

Manufacturer


Samsung

Related datasheet

K9XXG16UXM-K

K9XXG16UXM-P

K9XXG16UXM-Y

K9XXG08UXA

K9XXG08UXM-E

K9XXG08UXM-K

K9XXG08UXM-P

K9XXG08UXM-Y

K903

K904

K91G08Q0M

K931

K932

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts