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K9XXG16UXM-P

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9XXG16UXM-P Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit

K9XXG16UXM-P General Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-byte(X8 device) or 1056-word(X16 device) page an.

K9XXG16UXM-P Datasheet (680.06 KB)

Preview of K9XXG16UXM-P PDF

Datasheet Details

Part number:

K9XXG16UXM-P

Manufacturer:

Samsung

File Size:

680.06 KB

Description:

256m x 8 bit / 128m x 16 bit nand flash memory.
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.

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TAGS

K9XXG16UXM-P 256M Bit 128M Bit NAND Flash Memory Samsung

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