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K3N4C1000D-GC Datasheet - Samsung Electronics

8M-Bit CMOS Mask ROM

K3N4C1000D-GC Features

* Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)

* Fast access time : 100ns(Max.)

* Supply voltage : single +5V

* Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

* Fully static operation

* All inputs and output

K3N4C1000D-GC General Description

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level. (See mode selection table) This device operates with a 5V singl.

K3N4C1000D-GC Datasheet (61.69 KB)

Preview of K3N4C1000D-GC PDF

Datasheet Details

Part number:

K3N4C1000D-GC

Manufacturer:

Samsung Electronics

File Size:

61.69 KB

Description:

8m-bit cmos mask rom.

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TAGS

K3N4C1000D-GC 8M-Bit CMOS Mask ROM Samsung Electronics

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