Description
The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.
Features
- Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
- Fast access time : 100ns(Max. ).
- Supply voltage : single +5V.
- Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
- Fully static operation.
- All inputs and outputs TTL compatible.
- Three state outputs.
- Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600
CMOS MASK ROM.
K3N4C1000D-DC Datasheet
