K3N4C1000D-DC Datasheet (8M-Bit CMOS Mask ROM)

Part: K3N4C1000D-DC
Manufacturer: Samsung Electronics
Size: 61.69 KB

K3N4C1000D-DC Key Features

Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)
Fast access time : 100ns(Max.)
Supply voltage : single +5V
Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
Fully static operation
All inputs and outputs TTL patible
Three state outputs
Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600

Related Samsung Electronics Datasheets

Part Number	Description
K3N4C1000D-GC	8M-Bit CMOS Mask ROM
K3N4C1000D-TC	8M-Bit CMOS Mask ROM
K3N4C1000D-TE	8M-Bit CMOS Mask ROM

K3N4C1000D-DC Description

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level. (See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL patible. Because of its asynchronous operation, it requires no...