K3N4C1000D-GC - 8M-Bit CMOS Mask ROM

Product Overview

Samsung Electronics

Datasheet Details

Part number	K3N4C1000D-GC
Manufacturer	Samsung Electronics
File Size	61.69 KB
Description	8M-Bit CMOS Mask ROM
Datasheet	K3N4C1000D-GC Datasheet
Note	This datasheet PDF includes multiple part numbers: K3N4C1000D-GC, K3N4C1000D-DC. Please refer to the document for exact specifications by model.
Additional preview pages of the K3N4C1000D-GC datasheet.

Product details

Description

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.

Features

Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
Fast access time : 100ns(Max. ).
Supply voltage : single +5V.
Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600 CMOS MASK ROM.

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Other Datasheets by Samsung Electronics

K3N4C1000D-DC - 8M-Bit CMOS Mask ROM
K3N4C1000D-TC - 8M-Bit CMOS Mask ROM
K3N4C1000D-TE - 8M-Bit CMOS Mask ROM

Published: Mar 21, 2006 |