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K3N4C1000D-TE Datasheet

Manufacturer: Samsung Electronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

K3N4C1000D-TE datasheet preview

Datasheet Details

Part number K3N4C1000D-TE
Datasheet K3N4C1000D-TE K3N4C1000D-TC Datasheet (PDF)
File Size 59.85 KB
Manufacturer Samsung Electronics
Description 8M-Bit CMOS Mask ROM
K3N4C1000D-TE page 2 K3N4C1000D-TE page 3

K3N4C1000D-TE Overview

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N4C1000D-TC(E) is packaged in a 44-TSOP2.

K3N4C1000D-TE Key Features

  • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode)
  • Fast access time : 100ns(Max.)
  • Supply voltage : single +5V
  • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N4C1000D-TC(E) : 44-TSOP2-400
  • A0 A-1
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More Datasheets from Samsung Electronics

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Part Number Description
K3N4C1000D-TC 8M-Bit CMOS Mask ROM
K3N4C1000D-DC 8M-Bit CMOS Mask ROM
K3N4C1000D-GC 8M-Bit CMOS Mask ROM

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