K3N4C1000D-TE - 8M-Bit CMOS Mask ROM

Product Overview

Samsung Electronics

Datasheet Details

Part number	K3N4C1000D-TE
Manufacturer	Samsung Electronics
File Size	59.85 KB
Description	8M-Bit CMOS Mask ROM
Datasheet	K3N4C1000D-TE Datasheet
Note	This datasheet PDF includes multiple part numbers: K3N4C1000D-TE, K3N4C1000D-TC. Please refer to the document for exact specifications by model.
Additional preview pages of the K3N4C1000D-TE datasheet.

Product details

Description

The K3N4C1000D-TC(E) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible.

Features

Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode).
Fast access time : 100ns(Max. ).
Supply voltage : single +5V.
Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. K3N4C1000D-TC(E) : 44-TSOP2-400 CMOS MASK ROM.

📁 Similar Datasheet

K3N5V1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM (Samsung Semiconductor)
K3N5V1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM (Samsung Semiconductor)
K3N5V1000F-DGC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM (Samsung Semiconductor)
K3N5VU1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM (Samsung Semiconductor)
K3N5VU1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM (Samsung Semiconductor)
K3N5VU1000F-DGC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM (Samsung Semiconductor)
K3N7U4000B - 64M-Bit (4M X 16) CMOS Mask ROM (Samsung Semiconductor)
K3N7U4000C - 64M-Bit (4M X 16) CMOS Mask ROM (Samsung Semiconductor)

Other Datasheets by Samsung Electronics

K3N4C1000D-TC - 8M-Bit CMOS Mask ROM
K3N4C1000D-DC - 8M-Bit CMOS Mask ROM
K3N4C1000D-GC - 8M-Bit CMOS Mask ROM

Published: Mar 21, 2006 |