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K9HCG08U1M Datasheet FLASH MEMORY

Manufacturer: Samsung Electronics

Overview: K9MDG08U5M K9LBG08U0M K9HCG08U1M Preliminary www.DataSheet4U.

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K9HCG08U1M flash memory by Samsung Electronics - Datasheet Preview

Datasheet Details

Part number	K9HCG08U1M
Manufacturer	Samsung Electronics
File Size	1.49 MB
Description	FLASH MEMORY
Download	K9HCG08U1M Download (PDF)

Key Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
K9MDG08U5M: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

📁 Similar Datasheet

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	K9HCG08U1D	4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory	Samsung semiconductor
	K9HCG08U1E	16Gb E-die NAND Flash	Samsung

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