• Part: K9MCG08U5M
  • Description: Flash Memory
  • Manufacturer: Samsung Electronics
  • Size: 1.11 MB
K9MCG08U5M Datasheet (PDF) Download
Samsung Electronics
K9MCG08U5M

Description

Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

Key Features

  • Voltage Supply : 2.7 V ~ 3.6 V
  • Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.) *K9MCG08U5M : 50ns(Min.)
  • Memory Cell : 2bit / Memory Cell
  • Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years
  • mand Register Operation