K9MCG08U5M Datasheet - Samsung Electronics

Flash Memory

K9MCG08U5M Features

* Voltage Supply : 2.7 V ~ 3.6 V

* Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit

* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte

* Page Read Operation - Page Size : (2K + 64)By

K9MCG08U5M General Description

Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed .

K9MCG08U5M Datasheet (1.11 MB)

K9MCG08U5M Datasheet Preview — Preview of K9MCG08U5M PDF

Datasheet Details

Part number:

K9MCG08U5M

Manufacturer:

Samsung Electronics

File Size:

1.11 MB

Description:

Flash memory.
www.DataSheet4U.com K9HBG08U1M K9LAG08U0M K9MCG08U5M Advance FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU.

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K9MCG08U5M Flash Memory Samsung Electronics

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K9MCG08U5M Features

K9MCG08U5M General Description

Datasheet Details

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