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KM23V4000D - (KM23x4000xTY) 4M-Bit CMOS Mask ROM

Download the KM23V4000D datasheet PDF. This datasheet also covers the KM23S4000D variant, as both devices belong to the same (km23x4000xty) 4m-bit cmos mask rom family and are provided as variant models within a single manufacturer datasheet.

Description

The KM23V4000D(E)TY and KM23S4000D(E)TY are fully static mask programmable ROM organized 524,288 x 8 bit.

It is fabricated using silicon gate CMOS process technoiogy.

This device operates with low power supply, and all inputs and outputs are TTL compatible.

Features

  • 524,288 x 8 bit organization.
  • Fast access time 3.3V Operation : 100ns(Max. ) 3.0V Operation : 120ns(Max. ) 2.5V Operation : 250ns(Max. ).
  • Supply voltage KM23V4000D(E)TY : single +3.0V/ single +3.3V KM23S4000D(E)TY : single +2.5V.
  • Current consumption Operating : 25mA(Max. ) Standby : 30 µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23V(S)4000D(E)TY : 32-TSOP1-0820 CMO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM23S4000D_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KM23V4000D(E)TY/KM23S4000D(E)TY 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(Max.) • Supply voltage KM23V4000D(E)TY : single +3.0V/ single +3.3V KM23S4000D(E)TY : single +2.5V • Current consumption Operating : 25mA(Max.) Standby : 30 µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23V(S)4000D(E)TY : 32-TSOP1-0820 CMOS MASK ROM GENERAL DESCRIPTION The KM23V4000D(E)TY and KM23S4000D(E)TY are fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technoiogy. This device operates with low power supply, and all inputs and outputs are TTL compatible.
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