4M-Bit Datasheet | Specifications & PDF Download

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.

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3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit o

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3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organ

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4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version) Preliminary Information • • • • HYB 3164165BT(L) -40/-50/-60 HYB 3165165BT(L) -40/-50/-60

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M24M01 1 Mbit Serial I²C Bus EEPROM FEATURES SUMMARY 2 s 400 kHz High Speed Two Wire I C Serial Interface s Figure 1. Packages Single Supply Voltage

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KM41C4000D, KM41V4000D CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1bit Fast Page Mode CMOS

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K4F170411D, K4F160411D K4F170412D, K4F160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4

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K4S56163LF - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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M24M01-A125 Automotive 1-Mbit serial I²C bus EEPROM with 1 MHz clock TSSOP8 (DW) 169 mil width SO8 (MN) 150 mil width Datasheet - production data F

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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W25Q64FV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: July 18, 2017 -1 Revision S W25Q64FV Table of Contents

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W25Q64JV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI For Industrial & Industrial Plus Grade Publication Release Date: March 10, 2021 Revision K

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M24M02E-U Datasheet 2-Mbit serial I²C bus EEPROM with unique identifier, configurable device address, and software write protection registers SO8N (1

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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