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KM641001B Datasheet

CMOS Sram

Manufacturer: Samsung Semiconductor

KM641001B Overview

The KM641001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641001B/BL uses 4 mon input and output lines and has at output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology.

KM641001B Key Features

  • Fast Access Time 15, 20ns(Max.)
  • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) 1mA(Max) L-Ver. Only Operating KM641001B/BL
  • 15 : 120mA(Max.) KM641001B/BL
  • 20 : 118mA(Max.)
  • Single 5.0V±10% Power Supply
  • TTL patible Inputs and Outputs
  • Fully Static Operation
  • No Clock or Refresh required
  • Three State Outputs
  • 2V Minimum Data Retention ; L-Ver. only

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
KM641001BL CMOS SRAM
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