KM644002B Datasheet - Samsung Semiconductor

KM644002B 1M X 4 Bit (with Oe)high Speed CMOS Static RAM

The KM644002B is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The KM644002B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

( DataSheet : www.DataSheet4U.com ) KM644002B, KM644002BI Document Title 1Mx4 Bit (with OE) High Speed Static RAM(5V Operating), Operated at Commercial and Industrial Temperature Range. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet 1. Delete Preliminary 2. Add 30pF capacitive in test load 3. Relex DC characteristics Item ICC 10ns.

KM644002B Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM644002B - 10 : 195mA(Max.) KM644002B - 12 : 190mA(Max.) KM644002B - 15 : 185mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatible Inputs and Outpu

KM644002B_SamsungSemiconductor.pdf