KM641001B Datasheet - Samsung Semiconductor

KM641001B CMOS SRAM

The KM641001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641001B/BL uses 4 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s adva.

www.DataSheet4U.com PRELIMINARY CMOS SRAM KM641001B/BL Document Title 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 17ns, L-version and Industrial Temperature Part. 2.3. Delete VOH1=3.95V. 2.4. Delete Data Retention Characteristics.

KM641001B Features

* Fast Access Time 15, 20ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) 1mA(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120mA(Max.) KM641001B/BL - 20 : 118mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatible Inputs and Outputs

KM641001B_SamsungSemiconductor.pdf