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KM6161002B - CMOS SRAM

Datasheet Summary

Description

The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.

The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 8,10,12ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 50 mA(Max. ) (CMOS) : 10 mA(Max. ) Operating KM6161002B - 8 : 200 mA(Max. ) KM6161002B - 10 : 195 mA(Max. ) KM6161002B - 12 : 190 mA(Max. ).
  • Single 5.0V ±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pin Configuration.

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Datasheet preview – KM6161002B

Datasheet Details

Part number KM6161002B
Manufacturer Samsung
File Size 197.98 KB
Description CMOS SRAM
Datasheet download datasheet KM6161002B Datasheet
Additional preview pages of the KM6161002B datasheet.

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Full PDF Text Transcription

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KM6161002B, KM6161002BI Document Title CMOS SRAM 64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary 2.2. Delete L-version. 2.3. Delete Data Retention Characteristics and Waveform. 2.4. Add Capacitive load of the test environment in A.C test load 2.5. Change D.C characteristics Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) Icc 200/190/180mA 200/195/190mA Isb 30mA 50mA Draft Data Apr. 1st, 1997 Jun. 1st, 1997 Remark Design Target Preliminary Rev. 2.0 Feb.
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