KM6161002B - CMOS SRAM

Samsung

Datasheet Details

The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.

Fast Access Time 8,10,12ns(Max. ).
Low Power Dissipation Standby (TTL) : 50 mA(Max. ) (CMOS) : 10 mA(Max. ) Operating KM6161002B - 8 : 200 mA(Max. ) KM6161002B - 10 : 195 mA(Max. ) KM6161002B - 12 : 190 mA(Max. ).
Single 5.0V ±10% Power Supply.
TTL Compatible Inputs and Outputs.
I/O Compatible with 3.3V Device.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
Center Power/Ground Pin Configuration.

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Published: Jul 29, 2005 |