KM6161002B Datasheet - Samsung

KM6161002B CMOS SRAM

The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte acce.

KM6161002B, KM6161002BI Document Title CMOS SRAM 64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary 2.2. Delete L-version. 2.3. Delete Data Retention Characteristics and Waveform. 2.4. Add Capacitive lo.

KM6161002B Features

* Fast Access Time 8,10,12ns(Max.)

* Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM6161002B - 8 : 200 mA(Max.) KM6161002B - 10 : 195 mA(Max.) KM6161002B - 12 : 190 mA(Max.)

* Single 5.0V ±10% Power Supply

* TTL Compatible Inputs an

KM6161002B Datasheet (197.98 KB)