KM616FV1000 Key Features
- Process Technology : Full CMOS
- Organization : 64Kx16 bit
- Power Supply Voltage
- Low Data Retention Voltage : 1.5V(Min)
- Three state output status and TTL patible
- Package Type : 44-TSOP2-400F
- Part: KM616FV1000
- Manufacturer: Samsung Semiconductor
- Size: 135.08 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| KM616FR1000 | 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM |
| KM616FS1000 | 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM |
| KM6161002A | CMOS SRAM |
| KM6161002B | CMOS SRAM |
| KM6161002C | CMOS SRAM |
KM616FV1000 Description
The KM616FV1000, KM616FS1000 and KM616FR1000 families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.