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KM6161002B - CMOS SRAM

General Description

The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.

The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle.

Key Features

  • Fast Access Time 8,10,12ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 50 mA(Max. ) (CMOS) : 10 mA(Max. ) Operating KM6161002B - 8 : 200 mA(Max. ) KM6161002B - 10 : 195 mA(Max. ) KM6161002B - 12 : 190 mA(Max. ).
  • Single 5.0V ±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pin Configuration.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM6161002A CMOS SRAM
KM6161002C CMOS SRAM
KM616FR1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM616FS1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM616FV1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KM6161002B, KM6161002BI Document Title CMOS SRAM 64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary 2.2. Delete L-version. 2.3. Delete Data Retention Characteristics and Waveform. 2.4. Add Capacitive load of the test environment in A.C test load 2.5. Change D.C characteristics Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) Icc 200/190/180mA 200/195/190mA Isb 30mA 50mA Draft Data Apr. 1st, 1997 Jun. 1st, 1997 Remark Design Target Preliminary Rev. 2.0 Feb.