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KM6161002B Key Features

  • Fast Access Time 8,10,12ns(Max.)
  • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM6161002B
  • 8 : 200 mA(Max.) KM6161002B
  • 10 : 195 mA(Max.) KM6161002B
  • 12 : 190 mA(Max.)
  • Single 5.0V ±10% Power Supply
  • TTL patible Inputs and Outputs
  • I/O patible with 3.3V Device
  • Fully Static Operation
  • No Clock or Refresh required

Related Samsung Semiconductor Datasheets

Part Number Description
KM6161002A CMOS SRAM
KM6161002C CMOS SRAM
KM616FR1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM616FS1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM616FV1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

KM6161002B Description

The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 mon input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control ( UB, LB).