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KM6161002B

Manufacturer: Samsung Semiconductor

KM6161002B datasheet by Samsung Semiconductor.

KM6161002B datasheet preview

KM6161002B Datasheet Details

Part number KM6161002B
Datasheet KM6161002B_Samsung.pdf
File Size 197.98 KB
Manufacturer Samsung Semiconductor
Description CMOS SRAM
KM6161002B page 2 KM6161002B page 3

KM6161002B Overview

The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 mon input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control ( UB, LB).

KM6161002B Key Features

  • Fast Access Time 8,10,12ns(Max.)
  • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM6161002B
  • 8 : 200 mA(Max.) KM6161002B
  • 10 : 195 mA(Max.) KM6161002B
  • 12 : 190 mA(Max.)
  • Single 5.0V ±10% Power Supply
  • TTL patible Inputs and Outputs
  • I/O patible with 3.3V Device
  • Fully Static Operation
  • No Clock or Refresh required
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More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
KM6161002A CMOS SRAM
KM6161002C CMOS SRAM
KM616FR1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM616FS1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM616FV1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM62256BL 32K x 8-Bit High Speed CMOS Static RAM
KM62256BL-L 32K x 8-Bit High Speed CMOS Static RAM
KM62256C 32K x 8 bit Low Power CMOS Static RAM
KM62256CL 32K x 8 bit Low Power CMOS Static RAM
KM62256CL-L 32K x 8 bit Low Power CMOS Static RAM

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