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KM62U256D - Low Power and Low Voltage CMOS Static RAM

General Description

The KM62V256D and KM62U256D families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature range and have various package types for user flexibility of system design.

Key Features

  • Process Technology : TFT.
  • Organization : 32Kx8.
  • Power Supply Voltage KM62V256D family : 2.7~3.3V KM62U256D family : 3.0~3.6V.
  • Low Data Retention Voltage : 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type : 28-SOP-450 28-TSOP1-0813.4F/R CMOS SRAM.

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📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM62U256C Low Power AND Low Vcc CMOS Static RAM
KM62V256C Low Power AND Low Vcc CMOS Static RAM
KM62V256D Low Power and Low Voltage CMOS Static RAM
KM6164000B 256Kx16 bit Low Power CMOS Static RAM
KM6164002 CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com KM62V256D, KM62U256D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Improved power dissipation : 0.7W→1W Draft Data April 1, 1997 November 12, 1997 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and products.